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| SHINDENGEN Schottky Rectifiers (SBD) Dual SF30NC15M 150V 30A OUTLINE DIMENSIONS Case : FTO-220A Unit : mm RATINGS Absolute Maximum Ratings iTc=25 unless otherwise specifiedj Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, Resistance load, Rating for each diode Io/2, Tc=107 IO Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR (Recommended torque : 0.3Nm) Electrical Characteristics iTc=25 unless otherwise specifiedj Item Symbol Conditions Forward Voltage IF=15A, Pulse measurement, Rating of per diode VF Reverse Current VR=150V, Pulse measurement, Rating of per diode IR Junction Capacitance f=1MHz, VR=10V, Rating of per diode Cj Thermal Resistance AEjc junction to case Ratings -55 to 150 150 150 30 300 2 0.5 Units V A A kV Nm Ratings Max. 0.88 Max. 0.5 Typ. 300 Max. 1.6 Unit V mA pF /W Copyright & Copy;2004 Shindengen Electric Mfg.Co.Ltd SF30NC15M 100 Forward Voltage Pulse measurement per diode 50 20 Tc=150C [MAX] Tc=150C [TYP] Tc= 25C [MAX] Tc= 25C [TYP] IF [A] Forward Current 10 5 2 1 0.5 0.2 0.1 0 0.5 1 1.5 2 VF [V] Forward Voltage SF30NC15M 10000 Reverse Current Pulse measurement per diode Tc=150C [TYP] 1000 Tc=125C [TYP] Tc=100C [TYP] 100 Tc=75C [TYP] IR [ A] Reverse Current 10 Tc=50C [TYP] 1 Tc=25C [TYP] 0.1 0.01 0.001 0 50 100 150 VR [V] Reverse Voltage SF30NC15M 40 Forward Power Dissipation DC 35 D=0.8 0.5 SIN 25 0.2 20 15 10 5 0 0.05 0.1 0.3 PF [W] Forward Power Dissipation 30 0 10 20 30 40 50 IO [A] Average Rectified Forward Current Tj = 150C IO 0 tp D=tp/T T SF30NC15M Reverse Power Dissipation 5 DC D=0.05 0.1 0.2 3 0.3 4 PR [W] Reverse Power Dissipation 0.5 2 1 SIN 0.8 0 0 20 40 60 80 100 120 140 160 VR [V] Reverse Voltage Tj = 150C 0 VR tp D=tp/T T SF30NC15M 60 Derating Curve IO [A] Average Rectified Forward Current 50 DC D=0.8 40 0.5 SIN 0.3 0.2 20 0.1 10 0.05 30 0 0 20 40 60 80 100 120 140 160 Tc [C] Case Temperature VR =75V IO 0 0 VR tp D=tp/T T SF30NC15M 400 Peak Surge Forward Capability IFSM 350 10ms 10ms 1 cycle 300 non-repetitive, sine wave, Tj=25C before surge current is applied IFSM [A] Peak Surge Forward Current 250 200 150 100 50 0 1 2 5 10 20 50 100 [cycle] Number of Cycles SF30NC15M 5000 Junction Capacitance f=1MHz Tc=25C TYP per diode 2000 1000 Cj [pF] Junction Capacitance 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 100 150 VR [V] Reverse Voltage |
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